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BR25A256F-3MGE2 Datasheet(PDF) 2 Page - Rohm |
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BR25A256F-3MGE2 Datasheet(HTML) 2 Page - Rohm |
2 / 32 page Datasheet 2/28 BR25A256-3M TSZ02201-0R1R0G100390-1-2 22.Dec.2014 Rev.003 ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 www.rohm.com Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Remarks Supply Voltage VCC -0.3 to +6.5 V Power Dissipation Pd 0.45(SOP8) W When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. 0.45 (SOP-J8) When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. 0.33 (TSSOP-B8) When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. Storage Temperature Tstg - 65 to +150 °C Operating Temperature Topr - 40 to +105 °C Input Voltage / Output Voltage ‐ - 0.3 to Vcc+1.0 V The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not under -1.0V. Junction temperature Tjmax 150 °C Junction temperature at the storage condition Electrostatic discharge voltage (human body model) VESD -4000 to +4000 V Caution: Operating the IC over the absolute Maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute Maximum ratings. Memory Cell Characteristics (Vcc=2.5V to 5.5V) Parameter Limits Unit Condition Min Typ Max Write Cycles (Note1) 1,000,000 - - Times Ta ≤25°C 150,000 - - Times Ta ≤105°C Data Retention (Note1) 100 - - Years Ta ≤25°C 20 - - Years Ta ≤105°C (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Min Max Power Source Voltage Vcc 2.5 5.5 V Input Voltage VIN 0 VCC Bypass capacitor C 0.1 - µF Input / Output Capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Min Max Unit Conditions Input Capacity (Note1) CIN - 8 pF VIN=GND Output Capacity (Note1) COUT - 8 VOUT=GND (Note1) Not 100% TESTED. DC Characteristics (Unless otherwise specified, Ta=-40°C to +105°C, Vcc=2.5V to 5.5V) Parameter Symbol Limits Unit Conditions Min Typ Max Input High Voltage VIH 0.7xVcc - Vcc+1.0 V Input Low Voltage VIL -0.3 (Note1) - 0.3xVcc V Output Low Voltage VOL 0 - 0.4 V IOL=3.0mA Output High Voltage VOH Vcc-0.2 - Vcc V IOH=-2.0mA Input Leakage Current ILI - 1 - 1 µA VIN=0 to Vcc Output Leakage Current ILO - 1 - 1 µA VOUT=0 to Vcc, CSB=Vcc Supply Current (Write) ICC1 - - 3 mA Vcc=5.5V, fSCK=10MHz, tE/W=5ms Byte Write, Page Write, Write Status register Supply Current (Read) ICC2 - - 4 mA Vcc=5.5V, fSCK=10MHz, SO=OPEN Read, Read Status Register Standby Current ISB - - 10 µA Vcc=5.5V, SO=OPEN CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND (Note1) When the pulse width is 50ns or less, it is -1.0V. |
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