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CJP07N65 Datasheet(PDF) 1 Page - ZP Semiconductor |
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CJP07N65 Datasheet(HTML) 1 Page - ZP Semiconductor |
1 / 3 page TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Fast Switching Capability Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 7.4 A Pulsed Drain Current IDM 29.6 A Single Pulsed Avalanche Energy (note1) EAS 245 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Operating and Storage Temperature Range TJ, TSTG -55 ~+150 ℃ Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds TL 260 ℃ TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1 of 3 sales@zpsemi.com www.zpsemi.com CJP07N65 |
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