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KTD1414 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KTD1414 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor KTD1414 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 20 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.5 mA hFE -1 DC Current Gain IC= 1A; VCE= 2V 2000 hFE -2 DC Current Gain IC= 3A; VCE= 2V 1000 Switching times ton Turn-on Time IB1= -IB2= 6mA RL= 10Ω; VCC= 30V PW=20μs; Duty Cycle≤1% 0.2 μ s tstg Storage Time 1.5 μ s tf Fall Time 0.6 μ s |
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