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TO-252-2L Datasheet(PDF) 2 Page - ZP Semiconductor |
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TO-252-2L Datasheet(HTML) 2 Page - ZP Semiconductor |
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2 / 2 page  Electrical characteristics (Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 600 Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =4.0A 1.5 V Zero gate voltage drain current IDSS VDS =600V, VGS =0V 25 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =±30V ± 100 nA On characteristics (note2) Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.0 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =2.0A 2.0 3.0 Ω Forward transconductance gfs VDS =50V, ID =2A 2.5 S Dynamic characteristics (note 3) Input capacitance Ciss 760 Output capacitance Coss 180 Reverse transfer capacitance Crss VDS =25V,VGS =0V,f =1MHz 20 pF Switching characteristics (note 3) Total gate charge Qg 5.0 10 Gate-source charge Qgs 2.7 Gate-drain charge Qgd VDS =480V,VGS =10V,ID =4.0A 2.0 nC Turn-on delay time (note3) td(on) 20 Turn-on rise time (note3) tr 10 Turn-off delay time (note3) td(off) 40 Turn-off fall time (note3) tf VDD=300V, VGS=10V, RG=9.1Ω, ID =4.0A 20 ns Notes : 1. L= 30mH, IL=4 A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25 ℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. 2 of 2 sales@zpsemi.com www.zpsemi.com CJU04N60A |
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