CJP85N80-TO220-3L datasheet(1/2 Pages) ZPSEMI

Part #	CJP85N80-TO220-3L

Description	N - Channel Power MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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TO-220-3L Plastic-Encapsulate MOSFETS

CJP85N80

N-Channel Power MOSFET

DESCRIPTION

The CJP85N80 uses advanced trench technology and design to

provide excellent RDS(on) with low gate charge. Good stability and

uniformity with high EAS .This device is suitable for use in PWM,

load switching and general purpose applications.

FEATURE



Advanced trench process technology



Special designed for convertors and power controls



High density cell design for ultra low RDS(on)



Fully characterized avalanche voltage and current



Fast switching



Good stability and uniformity with high EAS



Excellent package for good heat dissipation



Special process technology for high ESD capability

APPLICATION



Power switching application



Hard switched and high frequency circuits



Uninterruptible power supply

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source voltage

VDS

85

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

80

Pulsed Drain Current (note 1)

IDM

320

A

Power Dissipation

(note 2 , Ta=25

℃)

2

W

Maximum Power Dissipation

(note 3 , Tc=25

℃)

PD

170

W

Single Pulsed Avalanche Energy (note 4)

EAS

620

mJ

Thermal Resistance from Junction to Ambient

RθJA

62.5

℃/W

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55 ~+150

℃

Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. This test is performed with no heat sink at Ta=25

℃.

3. This test is performed with infinite heat sink at Tc=25

℃.

4. EAS condition: Tj=25

℃,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω.

TO-220-3L

1. GATE

2. DRAIN

3. SOURCE

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CJP85N80

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