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F1A-NH-OK Datasheet(PDF) 1 Page - Dongguan City Niuhang Electronics Co.LTD |
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F1A-NH-OK Datasheet(HTML) 1 Page - Dongguan City Niuhang Electronics Co.LTD |
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1 / 3 page  Date:2014/10/20 Page: 1 of 3 Rev.:AA SOD- 123FL VOLTAGE 50 THRU 1000 Volts 1.0 Ampers CURRENT Unit:(mm) FEATURES MECHANICAL DATA Production Data Sheet MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED) Niu Hang Electronic Co. Ltd http://www.niuhang.com F1A THFU F1M FAST RECOVERY RECTIFIERS ● Low profile space ● Ideal for automated placement ● Glass passivated chip junctions ● Low forward voltage drop ● Low leakage current ● High forward surge capability ● High temperature soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC ● Case: JEDEC SOD-123FL molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ● Polarity: Laser band denotes cathode end DFR1A DFR1B DFR1D DFR1G DFR1J DFR1K DFR1M UNIT VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A IFSM A VF V IR μA trr 250 nS CJ p F TJ, TSTG ℃ Operating junction and storage temperature range –55 to +150 Maximum reverse recovery time at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A 150 500 Typical junction capacitance at 4.0 V ,1MHz 15 Maximum instantaneous forwad voltage at 1.0A 1.3 Maximum DC reverse current TA = 25 ℃ at Rated DC blocking voltage TA = 100℃ 5.0 50 Maximum average forward rectified current 1 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 25 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Device marking code F1A F1B F1D F1G F1J F1K F1M Parameter 0.115(2.90) 0.106(2.70) 0.043(1.08) 0.038(0.98) 0.145(3.70) 0.137(3.50) 0.030(0.75) 0.017(0.45) 1 2 Cathode Anode Date:2014/10/20 Page: 1 of 3 Rev.:AA SOD- 123FL VOLTAGE 50 THRU 1000 Volts 1.0 Ampers CURRENT Unit:(mm) FEATURES MECHANICAL DATA Production Data Sheet MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED) Niu Hang Electronic Co. Ltd http://www.niuhang.com F1A THFU F1M FAST RECOVERY RECTIFIERS ● Low profile space ● Ideal for automated placement ● Glass passivated chip junctions ● Low forward voltage drop ● Low leakage current ● High forward surge capability ● High temperature soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC ● Case: JEDEC SOD-123FL molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ● Polarity: Laser band denotes cathode end DFR1A DFR1B DFR1D DFR1G DFR1J DFR1K DFR1M UNIT VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A IFSM A VF V IR μA trr 250 nS CJ p F TJ, TSTG ℃ Operating junction and storage temperature range –55 to +150 Maximum reverse recovery time at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A 150 500 Typical junction capacitance at 4.0 V ,1MHz 15 Maximum instantaneous forwad voltage at 1.0A 1.3 Maximum DC reverse current TA = 25 ℃ at Rated DC blocking voltage TA = 100℃ 5.0 50 Maximum average forward rectified current 1 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 25 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Device marking code F1A F1B F1D F1G F1J F1K F1M Parameter 0.115(2.90) 0.106(2.70) 0.043(1.08) 0.038(0.98) 0.145(3.70) 0.137(3.50) 0.030(0.75) 0.017(0.45) 1 2 Cathode Anode |
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