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BF1211R Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BF1211R
Description  N-channel dual-gate MOS-FETs
Download  15 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1211R Datasheet(HTML) 6 Page - NXP Semiconductors

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2003 Dec 16
6
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
0
2.5
25
0
5
10
15
20
0.5
1
1.5
2
MDB829
(1)
(2)
(3)
(4)
(5)
(6)
(7)
ID
(mA)
VG1-S (V)
Fig.5 Transfer characteristics; typical values.
VDS = 5 V; Tj =25 °C.
(1) VG2-S =4V.
(2) VG2-S = 3.5 V.
(3) VG2-S =3V.
(4) VG2-S = 2.5 V.
(5) VG2-S =2V.
(6) VG2-S = 1.5 V.
(7) VG2-S =1V.
handbook, halfpage
02
4
24
0
8
16
6
MDB830
ID
(mA)
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Fig.6 Output characteristics; typical values.
VG2-S = 4 V; Tj =25 °C.
(1) VG1-S = 1.5 V.
(2) VG1-S = 1.4 V.
(3) VG1-S = 1.3 V.
(4) VG1-S = 1.2 V.
(5) VG1-S = 1.1 V.
(6) VG1-S =1V.
(7) VG1-S = 0.9 V.
(8) VG1-S = 0.8 V.
handbook, halfpage
0
100
0
20
40
60
80
0.5
1
1.5
2
MDB831
IG1
(
µA)
VG1-S (V)
(1)
(2)
(3)
(5)
(4)
(6)
(7)
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
VDS = 5 V; Tj =25 °C.
(1) VG2-S =4V.
(2) VG2-S = 3.5 V.
(3) VG2-S =3V.
(4) VG2-S = 2.5 V.
(5) VG2-S =2V.
(6) VG2-S = 1.5 V.
(7) VG2-S =1V.
handbook, halfpage
06
30
40
30
10
0
20
12
18
24
MDB832
yfs
(mS)
ID (mA)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.8
Forward transfer admittance as a function
of drain current; typical values.
VDS = 5 V; Tj =25 °C.
(1) VG2-S =4V.
(2) VG2-S = 3.5 V.
(3) VG2-S =3V.
(4) VG2-S = 2.5 V.
(5) VG2-S =2V.
(6) VG2-S = 1.5 V.


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