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BUP23C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUP23C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors BUP23B/C DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUP23B 450V (Min)-BUP23C · High Switching Speed APPLICATIONS · Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) BUP23B 750 V BUP23C 850 VCEO Collector-Emitter Voltage BUP23B 400 V BUP23C 430 VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @ TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃ /W |
Similar Part No. - BUP23C |
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Similar Description - BUP23C |
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