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LM1458M Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM1458M Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 6 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 5) Supply Voltage LM1558 ±22V LM1458 ±18V Power Dissipation (Note 2) LM1558H/LM1458H 500 mW LM1458N 400 mW Differential Input Voltage ±30V Input Voltage (Note 3) ±15V Output Short-Circuit Duration Continuous Operating Temperature Range LM1558 LM1458 −55˚C to +125˚C 0˚C to +70˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (Soldering, 10 sec.) 260˚C Soldering Information Dual-In-Line Package Soldering (10 seconds) 260˚C Small Outline Package Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD tolerance (Note 6) 300V Electrical Characteristics (Note 4) Parameter Conditions LM1558 LM1458 Units Min Typ Max Min Typ Max Input Offset Voltage T A = 25˚C, RS ≤ 10 kΩ 1.0 5.0 1.0 6.0 mV Input Offset Current T A = 25˚C 80 200 80 200 nA Input Bias Current T A = 25˚C 200 500 200 500 nA Input Resistance T A = 25˚C 0.3 1.0 0.3 1.0 M Ω Supply Current Both T A = 25˚C, VS = ±15V 3.0 5.0 3.0 5.6 mA Amplifiers Large Signal Voltage Gain T A = 25˚C, VS = ±15V 50 160 20 160 V/mV V OUT = ±10V, RL ≥ 2kΩ Input Offset Voltage R S ≤ 10 kΩ 6.0 7.5 mV Input Offset Current 500 300 nA Input Bias Current 1.5 0.8 µA Large Signal Voltage Gain V S = ±15V, VOUT = ±10V 25 15 V/mV R L ≥ kΩ Output Voltage Swing V S = ±15V, RL = 10 kΩ ±12 ±14 ±12 ±14 V R L = 2kΩ ±10 ±13 ±10 ±13 V Input Voltage Range V S = ±15V ±12 ±12 V Common Mode R S ≤ 10 kΩ 70 90 70 90 dB Rejection Ratio Supply Voltage R S ≤ 10 kΩ 77 96 77 96 dB Rejection Ratio Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: The maximum junction temperature of the LM1558 is 150˚C, while that of the LM1458 is 100˚C. For operating at elevated temperatures, devices in the H08 package must be derated based on a thermal resistance of 150˚C/W, junction to ambient or 20˚C/W, junction to case. For the DIP the device must be derated based on a thermal resistance of 187˚C/W, junction to ambient. Note 3: For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: These specifications apply for VS = ±15V and −55˚C ≤ TA ≤ 125˚C, unless otherwise specified. With the LM1458, however, all specifications are limited to 0˚C ≤ TA ≤ 70˚C and VS = ±15V. Note 5: Refer to RETS 1558V for LM1558J and LM1558H military specifications. Note 6: Human body model, 1.5 k Ω in series with 100 pF. www.national.com 3 |
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