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BD242B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD242B
Description  isc Silicon PNP Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD242B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BD242/A/B/C
DESCRIPTION
·
DC Current Gain -hFE = 25(Min)@ IC= -1.0A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A
-80V(Min)- BD242B; -100V(Min)- BD242C
·
Complement to Type BD241/A/B/C
APPLICATIONS
·
Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BD242
-55
V
BD242A
-70
BD242B
-90
BD242C
-115
VCEO
Collector-Emitter Voltage
BD242
-45
V
BD242A
-60
BD242B
-80
BD242C
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
-5.0
A
IB
Base Current
-1.0
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.125
℃
/W


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