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BM2P092 Datasheet(PDF) 2 Page - Rohm |
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BM2P092 Datasheet(HTML) 2 Page - Rohm |
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2 / 23 page  2/19 Datasheet Datasheet BM2PXX2 TSZ02201-0F2F0A200030-1-2 24. Sep.2015.Rev.005 © 2012 ROHM Co., Ltd. All rights reserved. www.rohm.com TSZ22111・15・001 ●Absolute Maximum Ratings（Ta=25 C） Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.3～30 V VCC Maximum applied voltage 2 Vmax2 -0.3～6.5 V SOURCE, FB, BR Maximum applied voltage 3 Vmax3 650 V DRAIN Drain current pulse I DP 10.40 A PW=10us, Duty cycle=1% (BM2P012) Drain current pulse I DP 5.20 A PW=10us, Duty cycle=1% (BM2P032) Drain current pulse I DP 2.60 A PW=10us, Duty cycle=1% (BM2P052) Drain current pulse I DP 1.30 A PW=10us, Duty cycle=1% (BM2P092) Allowable dissipation Pd 2000 mW Operating temperature range Topr -40 ～ +105 oC Maximum Junction Temperature TJMAX 150 oC Storage temperature range Tstr -55 ～ +150 oC (Note1) DIP7 : When mounted (on 74.2 mm × 74.2 mm,×1.6 mm thick, glass epoxy on double-layer substrate). Reduce to 16 mW/ C when Ta = 25C or above. ●Operating Conditions（Ta=25 C） Parameter Symbol Rating Unit Conditions Power supply voltage range 1 V CC 8.9～26.0 V VCC pin voltage Power supply voltage range 2 V DRAIN ～ 650 V DRAIN pin voltage ●Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25 C, VCC = 15 V) Parameter Symbol Specifications Unit Conditions Minimum Standard Maximum [MOSFET Block] Between drain and source voltage V (BR)DDS 650 - - V I D=1mA / VGS=0V Drain leak current I DSS - - 100 uA V DS=650V / VGS=0V On resistance R DS(ON) - 1.4 2.0 Ω I D=0.25A / VGS=10V (BM2P012) On resistance R DS(ON) - 2.4 3.6 Ω I D=0.25A / VGS=10V (BM2P032) On resistance R DS(ON) - 4.0 5.5 Ω I D=0.25A / VGS=10V (BM2P052) On resistance R DS(ON) - 8.5 12.0 Ω I D=0.25A / VGS=10V (BM2P092) |
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