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BM2P0391-Z Datasheet(PDF) 2 Page - Rohm |
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BM2P0391-Z Datasheet(HTML) 2 Page - Rohm |
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2 / 22 page  2/18 Datasheet Datasheet BM2P0391 TSZ02201-0F1F0A200150-1-2 12.JULY.2016.Rev.001 © 2016 ROHM Co., Ltd. All rights reserved. www.rohm.com TSZ22111・15・001 ●Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.3 to 30 V VCC Maximum applied voltage 2 Vmax2 -0.3 to 6.5 V SOURCE, FB, BR Maximum applied voltage 3 Vmax3 650 V DRAIN Drain current pulse IDP 5.20 A PW=10usec, Duty cycle=1% Allowable dissipation Pd 2.00 W Operating temperature range Topr -40 to +105 oC Maximum junction temperature Tjmax 150 oC Storage temperature range Tstr -55 to +150 oC (Note) DIP7 : When mounted (on 74.2 mm × 74.2 mm,×1.6 mm thick, glass epoxy on double-layer substrate). Reduce to 16 mW/ C when Ta = 25C or above. ●Operating Conditions (Ta=25 C) Parameter Symbol Rating Unit Conditions Power supply voltage range 1 VCC 8.9 to 26.0 V VCC pin voltage Power supply voltage range 2 VDRAIN to 650 V DRAIN pin voltage ●Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta=25 C, VCC=15V) Parameter Symbol Specifications Unit Conditions Minimum Standard Maximum [MOSFET Block ] Between drain and source Voltage V(BR)DDS 650 - - V ID=1mA / VGS=0V Drain leak current IDSS - - 100 μA VDS=650V / VGS=0V On resistance RDS(ON) - 2.4 3.6 Ω ID=0.25A / VGS=10V Avalanche Energy EAS 400 μJ Design assurance Avalanche Energy circuit EAS : Avalanche Energy IAS : Avalanche Current V(BR)DSS : Drain - Source breakdown voltage VGS : Gate - Source voltage VDS : Drain - Source voltage VDD : Power supply voltage L : Coil RG : Gate resistance |
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