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PMEG2010EA Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG2010EA Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  2004 Feb 06 3 Philips Semiconductors Product specification Low VF (MEGA) Schottky barrier diode PMEG2010EA CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Notes 1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm. 2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF continuous forward voltage see Fig.2; note 1 IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1000 mA 480 550 mV IR continuous reverse current see Fig.3; note 1 VR =5V 5 10 µA VR =8V 7 20 µA VR = 15 V 10 50 µA Cd diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 220 K/W note 2 180 K/W |
Similar Part No. - PMEG2010EA |
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