PG-TO252-3

Type

Package

Marking

BTS3060TF

TO252-3

3060TF

Datasheet

3

Rev. 1.0, 2014-07-21

HITFET - BTS3060TF

Smart Low-Side Power Switch

BTS3060TF

1Overview

Application

•

Suitable for resistive, inductive and capacitive loads

•

Replaces electromechanical relays, fuses and discrete circuits

•

Most suitable for inductive loads as well as loads with inrush currents

Basic Features

•

Single channel device

•

Very low power DMOS leakage current in OFF state

•

Electrostatic discharge protection (ESD)

•

Green Product (RoHS compliant)

•

AEC Qualified

Description

The BTS3060TF is a 50 m

Ω single channel Smart Low-Side Power Switch with in a TO252-3 package providing

embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET.

The device is monolithically integrated. The BTS3060TF is automotive qualified and is optimized for 12V

automotive applications.

Protection Functions

•

Latching over temperature protection

•

Active clamp over voltage protection

•

Current limitation

Table 1

Product Summary

Operating voltage range

V

OUT

3.0 .. 35.0 V

Maximum load voltage

V

BAT(LD)

42 V

Maximum input voltage

V

IN

5.5 V

Maximum On-State resistance at

T

R

DS(ON)

135 m

Ω

Nominal load current

I

L(NOM)

3 A

Minimum current limitation

I

L(LIM)

10.5 A

Maximum OFF state load current at

T

I

L(OFF)

2 µA