1,000

10,000

100,000

1,000,000

10,000,000

100,000,000

80

90

100

110

120

130

140

150

Wirebond Voiding Fail Mode

Electromigration Failure Mode

THS4500-EP

SLOS832 – JUNE 2013

www.ti.com

Applicable for –55ºC

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OUTPUT COMMON-MODE VOLTAGE CONTROL

Small-signal bandwidth

180

MHz

Slew rate

80

V/

μs

Minimum gain

0.92

V/V

Maximum gain

1.17

V/V

Common-mode offset voltage

-5.6

35

mV

Input bias current

3

μA

Input voltage range

1.3

3.7

V

Input impedance

25 || 1

k

Ω || pF

Maximum default voltage

2.75

V

Minimum default voltage

2.25

V

POWER SUPPLY

Specified operating voltage

15

V

Maximum quiescent current

38

mA

Minimum quiescent current

10

mA

Power-supply rejection (+PSRR)

66

dB

POWER -DOWN

Enable voltage threshold

Device enabled ON above 2.1 V

2.1

V

Disable voltage threshold

Device disabled OFF below 0.7 V

0.7

V

Power-down quiescent current

1400

μA

Input bias current

140

μA

Input impedance

50 || 1

k

Ω || pF

Turn-on time delay

1000

ns

Turn-off time delay

800

ns

(1)

See datasheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

Enhanced plastic product disclaimer applies.

(4)

Electromigration calculation is based on output switching 50% duty cycle at max load of 120 mA.

Figure 1. THS4500-EP Derating Chart

8

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