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2SAR572D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SAR572D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SAR572D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -30 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -30 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -100mA -0.4 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 μ A hFE DC Current Gain IC= -0.5A; VCE= -3V 200 500 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 40 pF fTNOTE Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V,f= 100MHz 300 MHz NOTE:Pulsed |
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