SI5433DC-T1 datasheet(2/4 Pages) VISHAY

Part #	SI5433DC-T1

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 4 page

Si5433DC

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71233

S-21251—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = --250 mA

--0.45

V

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 8V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V

--1

mA

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V, TJ =85_C

--5

mA

On-State Drain Currenta

ID(on)

VDS --5 V, VGS =--4.5 V

--20

A

VGS =--4.5 V, ID =--4.8 A

0.036

0.040

Drain-Source On-State Resistancea

rDS(on)

VGS =--2.5 V, ID =--4.2 A

0.045

0.052

Ω

DS(on)

VGS =--1.8 V, ID =--1 A

0.062

0.072

Forward Transconductancea

gfs

VDS =--10 V, ID =--4.8 A

15

S

Diode Forward Voltagea

VSD

IS =--1.1 A, VGS =0 V

--0.8

--1.2

V

Dynamicb

Total Gate Charge

Qg

15

22

Gate-Source Charge

Qgs

VDS =--10 V, VGS =--4.5 V, ID =--4.8 A

3.6

nC

Gate-Drain Charge

Qgd

2.5

Turn-On Delay Time

td(on)

22

35

Rise Time

tr

VDD =--10 V,RL =10 Ω

29

45

Turn-Off Delay Time

td(off)

VDD = --10 V, RL = 10 Ω

ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω

94

140

ns

Fall Time

tf

54

80

Source-Drain Reverse Recovery Time

trr

IF = --1.1 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

0

4

8

12

16

20

01234

VGS =5 thru 2.5 V

TC =--55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

1.5 V

2V

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