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MTB015N10RQ8-0-T3-G Datasheet(PDF) 3 Page - Cystech Electonics Corp. |
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MTB015N10RQ8-0-T3-G Datasheet(HTML) 3 Page - Cystech Electonics Corp. |
3 / 9 page CYStech Electronics Corp. Spec. No. : C053Q8 Issued Date : 2016.11.02 Revised Date : Page No. : 3/9 MTB015N10RQ8 CYStek Product Specification Characteristics (Cont. TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic td(ON) *1, 2 - 17.8 - tr *1, 2 - 18.4 - td(OFF) *1, 2 - 61.6 - tf *1, 2 - 6.4 - ns VDS=50V, ID=10A, VGS=10V, RGS=1Ω Source-Drain Diode Ratings and Characteristics IS *1 - - 8.5 ISM *3 - - 34 A VSD *1 - 0.8 1.2 V IS=10A, VGS=0V trr - 31 - ns Qrr - 43 - nC IF=10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint |
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