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AP1159ADS11 Datasheet(PDF) 5 Page - Asahi Kasei Microsystems |
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AP1159ADS11 Datasheet(HTML) 5 Page - Asahi Kasei Microsystems |
5 / 19 page [AP1159ADSXX] Rev. 0.1 - 5 - 2014/09 8. Absolute Maximum Ratings Parameter Symbol min max Unit Condition Input voltage VINMAX -0.4 16 V Output bias VREVMAX -0.4 6 V NP pin voltage VNPMAX -0.4 5 V Control pin voltage VCONTMAX -0.4 16 V Junction temperature Tj - 150 C Storage temperature TSTG -55 150 C Power dissipation PD - 400 mW (Note 1) Note 1. Ambient temperature is over 25C, power dissipation decreases by 4.0mW/C. In case of mounting on 2 layer glass epoxy substrate (3cm×3cm, t=1mm, cupper layer t=0.35μm) WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal operation is not guaranteed at these extremes. Figure 2. Maximum Power Dissipation 9. Recommended Operation Conditions Parameter Symbol min typ max Unit Comments Operational temperature Ta -40 - 85 V Input voltage VIN 2.1 - 14 C 40 0 25 50 125 125 100 125 75 125 0 125 Pd(mW ) (℃) -4.0mW/℃ 85 125 TA 125 |
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