TMS28F512A

65536 BY 8-BIT

FLASH MEMORY

SMJS514C – FEBRUARY 1994 – REVISED AUGUST 1997

1

POST OFFICE BOX 1443

’28F512A-10

100 ns

’28F512A-12

120 ns

’28F512A-15

150 ns

’28F512A-17

170 ns

and Output Lines

– Active Write . . . 55 mW

– Active Read... 165 mW

– Electrical Erase... 82.5 mW

– Standby... 0.55 mW

(CMOS-Input Levels)

– 40

°C to 125°C

description

The TMS28F512A Flash memory is a 65 536 by

8-bit

(524 288-bit),

programmable

read-only

memory that can be electrically bulk-erased and

reprogrammed. It is available in 10 000 and 1 000

program / erase endurance cycle versions.

The TMS28F512A is offered in a 32-lead plastic

leaded

chip-carrier

package

with

1,25-mm

(50-mil) lead spacing (FM suffix).

The TMS28F512A is characterized for operation

in temperature ranges of 0

°C to 70°C (FML suffix),

–40

°C to 85°C (FME suffix), and –40°C to 125°C

( FMQ suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PIN NOMENCLATURE

A0 – A15

Address Inputs

DQ0 – DQ7

Inputs (programming) / Outputs

E

Chip Enable

G

Output Enable

NC

No Internal Connection

VCC

5-V Power Supply

VPP

12-V Power Supply

V

SS

Ground

W

Write Enable

FM PACKAGE

( TOP VIEW )

32 1 32 31

14

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A14

A13

A8

A9

A11

G

A10

E

DQ7

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

430

15 16 17 18 19 20

Copyright

© 1997, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.