TN0200T/TS

Vishay Siliconix

Document Number: 70202

S-40277—Rev. F, 23-Feb-04

www.vishay.com

1

N-Channel 20-V (D-S) MOSFETs

PRODUCT SUMMARY

TN0200T

TN0200TS

20

0.73

1.2

20

0.65

1.1

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 0.29 W

D Low Threshold: 0.9 V (typ)

D 2.5-V or Lower Operation

D Fast Switching Speed: 22 ns

D Low Input and Output

Leakage

D Low Offset Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Error Voltage

D Low Battery Voltage

Operation

D Direct Logic-Level Interfact: TTL/CMOS

D Dirvers: Relays, Solenoids, Lamps, Hammers

D Battery Operated Systems, DC/DC Converters

D Solid-State Relays

D Load/Power Switching−Cell Phones, Pagers

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Marking Code:

TN0200T: NOwll

TN0200TS: NSwll

w = Week Code

ll = Lot Traceability

Parameter

Symbol

TN0200T

TN0200TSc

Unit

Drain-Source Voltage

20

20

V

Gate-Source Voltage

"8

"8

V

0.73

1.2

0.58

1.0

A

Pulsed Drain Currenta

4

4

A

Continuous Source Current (Diode Conduction)b

0.6

1.0

Power Dissipationb

0.35

1.0

W

Power Dissipationb

0.22

0.65

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

TN0200T

TN0200TSc

Unit

Maximum Junction-to-Ambientb

357

125

_C/W

Notes

a.

Pulse width limited by maximum junction temperature.

b.

Surface Mounted on FR4 Board, t v 10 sec.

c.

Copper lead frame.