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IRF9620SPbF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF9620SPbF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91083 www.vishay.com S11-1051-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF9620S, SiHF9620S Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • P-Channel •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5). b. Not Applicable c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1” square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) - 200 RDS(on) ()VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S G D P-Channel MOSFET D2PAK (TO-263) G D S ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9620S-GE3 SiHF9620STRL-GE3a Lead (Pb)-free IRF9620SPbF IRF9620STRLPbFa SiHF9620S-E3 SiHF9620STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 3.5 A TC = 100 °C - 2.0 Pulsed Drain Currenta IDM - 14 Linear Derating Factor 0.32 W/°C Linear Derating Factor (PCB Mount)e 0.025 Inductive Current, Clamp ILM - 14 A Maximum Power Dissipation TC = 25 °C PD 40 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.0 Peak Diode Recovery dV/dtc dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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