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IRF9620SPbF Datasheet(PDF) 1 Page - Vishay Siliconix

Part # IRF9620SPbF
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF9620SPbF Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91083
www.vishay.com
S11-1051-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF9620S, SiHF9620S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications
because
of
its low
internal
connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. ISD  - 3.5 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
- 200
RDS(on) ()VGS = - 10 V
1.5
Qg (Max.) (nC)
22
Qgs (nC)
12
Qgd (nC)
10
Configuration
Single
S
G
D
P-Channel MOSFET
D2PAK (TO-263)
G D
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF9620S-GE3
SiHF9620STRL-GE3a
Lead (Pb)-free
IRF9620SPbF
IRF9620STRLPbFa
SiHF9620S-E3
SiHF9620STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 200
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 3.5
A
TC = 100 °C
- 2.0
Pulsed Drain Currenta
IDM
- 14
Linear Derating Factor
0.32
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Inductive Current, Clamp
ILM
- 14
A
Maximum Power Dissipation
TC = 25 °C
PD
40
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.0
Peak Diode Recovery dV/dtc
dV/dt
- 5.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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