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SI4101DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4101DY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si4101DY New Product Document Number: 62828 S13-0110-Rev. A, 21-Jan-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Adaptor Switch, Load Switch • Power Management • Notebook Computers and Portable Battery Packs Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 84 °C/W. d. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) d Qg (Typ.) - 30 0.0060 at VGS = - 10 V - 25.7 65 nC 0.0080 at VGS = - 4.5 V - 22.3 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 25.7 A TC = 70 °C - 20.6 TA = 25 °C - 18a, b TA = 70 °C - 14.4a, b Pulsed Drain Current (t = 300 µs) IDM - 70 Continuous Source-Drain Diode Current TC = 25 °C IS - 5 TA = 25 °C - 2.4a, b Avalanche Current L = 0.1 mH IAS - 30 Single-Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 6 W TC = 70 °C 3.8 TA = 25 °C 2.9a, b TA = 70 °C 1.9a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 36 43 °C/W Maximum Junction-to-Foot Steady State RthJF 16 21 |
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