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SI4101DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4101DY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  Vishay Siliconix Si4101DY New Product www.vishay.com 2 Document Number: 62828 S13-0110-Rev. A, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 20 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0050 0.0060 VGS = - 4.5 V, ID = - 10 A 0.0066 0.0080 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 72 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 8190 pF Output Capacitance Coss 772 Reverse Transfer Capacitance Crss 715 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 18 A 135 203 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 18 A 65 85 Gate-Source Charge Qgs 22.5 Gate-Drain Charge Qgd 17.6 Gate Resistance Rg f = 1 MHz 0.4 2 4 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 20 30 ns Rise Time tr 918 Turn-Off DelayTime td(off) 80 120 Fall Time tf 11 20 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 72 108 Rise Time tr 60 90 Turn-Off DelayTime td(off) 60 90 Fall Time tf 23 35 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 5 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.78 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 29 45 ns Body Diode Reverse Recovery Charge Qrr 19 29 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 16 |
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