SiHG21N65EF

www.vishay.com

Vishay Siliconix

S15-2686-Rev. A, 16-Nov-15

1

Document Number: 91607

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

E Series Power MOSFET with Fast Body Diode

FEATURES

• Fast body diode MOSFET using E series

technology

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer and computing

- ATX power supplies

• Industrial

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power supplies (SMPS)

• Applications using the following topologies

- LCC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

c. 1.6 mm from case.

PRODUCT SUMMARY

700

0.18

106

14

33

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and Halogen-free

SiHG21N65EF-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

± 30

21

A

13

53

Linear Derating Factor

1.7

W/°C

367

mJ

Maximum Power Dissipation

208

W

Operating Junction and Storage Temperature Range

-55 to +150

°C

Drain-Source Voltage Slope

dV/dt

37

V/ns

31

for 10 s

300

°C