IRFML8244TRPBF datasheet(1/2 Pages) ZPSEMI

Part #	IRFML8244TRPBF

Description	HEXFETPower MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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IRFML8244TRPbF

Application(s)

Micro3TM (SOT-23)

IRFML8244TRPbF

'

6

*

Load/ System Switch

Features and Benefits

VDS

25

V

VGS Max

± 20

V

RDS(on) max

(@VGS = 10V)

24

m



RDS(on) max

(@VGS = 4.5V)

41

m



Features

Benefits

Low RDS(on) (  24m)

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen



Environmentally friendly

MSL1, Consumer qualification

Increased reliability

Absolute Maximum Ratings

Symbol

Parameter

Units

VDS

Drain-Source Voltage

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

PD @TA = 25°C

Maximum Power Dissipation

PD @TA = 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

TJ, TSTG

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJA

Junction-to-Ambient

e

–––

100

RJA

Junction-to-Ambient (t<10s)

f

–––

99

1.25

0.80

24

W

°C/W

A

Max.

5.8

4.6

-55 to + 150

± 20

0.01

25

HEXFET® Power MOSFET

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