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SMD30KPA17A Datasheet(PDF) 1 Page - MDE Semiconductor, Inc. |
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SMD30KPA17A Datasheet(HTML) 1 Page - MDE Semiconductor, Inc. |
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1 / 1 page 1 FEATURES .Glass passivated chip junction .Bipolar electrical characteristics .30000W peak pulse power capability on 10/1000us waveform .Excellent clamping capability .Repetition rate(duty cycle):0.05﹪ .Low incremental surge resistance . Fast response time: typically less than 1.0ps from 0 Volts to BV MECHANICAL DATA Terminal:Silver plated lead ,solderable per MIL-STD-750,Method 2026 Mounting Position: Any for CA Series Weight:2.2±0.1g UNI-POLAR BI-POLAR SMD30KPA17A SMD30KPA17CA 17 18.99 50 1023.9 5000 29.3 SMD30KPA60A SMD30KPA60CA 60 67.0 5 297.1 5 102.0 SMD30KPA280A 280 312.8 5 65.3 2 464.0 For bidirectional type having Vrwm of 30 volts and less, the IR limit is double. MDE Semiconductor, Inc. MAXIMUN CLAMPING VOLTAGE @IPP VC (V) SMD30KPA CELL DATA SHEET (SILICON-AVALANCHE HIGH SURGE DIODES) SMD30KPA PART NUMBER TEST CURRE NT IT (mA) REVERSE STAND- OFF VOLTAGE VRWM(V) BREAKDOWN VOLTAGE VBR(V) MIN. @IT PEAK PULSE CURRENT Ipp (A) REVERSE LEAKAGE @ VRWM IR(μA) Preliminary |
Similar Part No. - SMD30KPA17A_13 |
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Similar Description - SMD30KPA17A_13 |
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