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TC2320 Datasheet(PDF) 2 Page - Supertex, Inc |
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TC2320 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 TC2320 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com N-Channel Electrical Characteristics (T A = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 200 - - V V GS = 0V, ID = 100µA V GS(th) Gate threshold voltage 0.6 - 2.0 V V GS = VDS, ID = 1.0mA ΔV GS(th) Change in V GS(th) with temperature - - -4.5 mV/OC V GS = VDS, ID = 1.0mA I GSS Gate body leakage - - 100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current - - 1.0 µA V GS = 0V, VDS = 100V - - 10.0 µA V GS = 0V, V DS = Max rating - - 1.0 mA V GS = 0V, TA = 125 O C V DS = 0.8 Max Rating I D(ON) On-state drain current 0.6 - - A V GS = 4.5V, VDS = 25V 1.2 - - V GS = 10V, VDS = 25V R DS(ON) Static drain-to-source on-state resistance - - 8.0 Ω V GS = 4.5V, ID = 150mA - - 7.0 V GS = 10V, ID = 1.0A ΔR DS(ON) Change in R DS(ON) with temperature - - 1.0 %/OC V GS = 4.5V, ID =150mA G FS Forward transconductance 150 - - mmho V DS = 25V, ID = 200mA C ISS Input capacitance - - 110 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common source output capacitance - - 60 C RSS Reverse transfer capacitance - - 23 t d(ON) Turn-on delay time - - 20 ns V DD =25V, I D = 150mA, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-off delay time - - 25 t f Fall time - - 25 V SD Diode forward voltage drop - - 1.8 V V GS = 0V, ISD = 200mA t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = 200mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. 1. 2. N-Channel Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT 10V VDD RGEN 0V 0V |
Similar Part No. - TC2320_08 |
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Similar Description - TC2320_08 |
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