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TN0610N3-GP002 Datasheet(PDF) 1 Page - Supertex, Inc |
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TN0610N3-GP002 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 5 page Supertex inc. Supertex inc. www.supertex.com Doc.# DSFP-TN0610 B080813 TN0610 YY = Year Sealed WW = Week Sealed = “Green” Packaging SiTN 0610 YYWW Features ► Low threshold - 2.0V max. ► High input impedance ► Low input capacitance - 100pF typical ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage Applications ► Logic level interfaces – ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 GATE SOURCE DRAIN TO-92 Product Marking Pin Configuration Package may or may not include the following marks: Si or Ordering Information Part Number Package Option Packing TN0610N3-G TO-92 1000/Bag TN0610N3-G P002 TO-92 2000/Reel TN0610N3-G P003 TN0610N3-G P005 TN0610N3-G P013 TN0610N3-G P014 Product Summary BV DSS/BVDGS R DS(ON) (max) I D(ON) (min) V GS(th) (max) 100V 1.5Ω 3.0A 2.0V Typical Thermal Resistance Package θ ja TO-92 132OC/W -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. |
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