BFP843F

Product Brief

Data Sheet

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Revision 1.0, 2013-06-19

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Product Brief

The BFP843F is a very low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a

broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These

measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high

volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports

in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which

enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The

device is housed in an easy to use plastic thin flat package with visible leads.