BFP840FESD

Product Brief

Data Sheet

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Revision 1.2, 2013-04-03

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Product Brief

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6

GHz Wi-Fi applications. The device is based on Infineon‘s reliable high volume SiGe:C technology.

The BFP840FESD provides inherently good input and output power match as well as inherently good noise match

at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input

leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi

application. Integrated protection elements at in- and output make the device robust against ESD and excessive

RF input power.

The device offers its high performance at low current and voltage and is especially well-suited for portable battery-

powered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat

package with visible leads.