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CAT5411YI00 Datasheet(PDF) 4 Page - ON Semiconductor

Part # CAT5411YI00
Description  Dual Digital Potentiometer (POT)
Download  14 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5411YI00 Datasheet(HTML) 4 Page - ON Semiconductor

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CAT5411
http://onsemi.com
4
DEVICE OPERATION
The CAT5411 is two resistor arrays integrated with SPI
serial interface logic, two 6-bit wiper control registers and
eight 6-bit, non-volatile memory data registers. Each resistor
array contains 63 separate resistive elements connected in
series. The physical ends of each array are equivalent to the
fixed terminals of a mechanical potentiometer (RH and RL).
RH and RL are symmetrical and may be interchanged. The tap
positions between and at the ends of the series resistors are
connected to the output wiper terminals (RW) by a CMOS
transistor switch. Only one tap point for each potentiometer
is connected to its wiper terminal at a time and is determined
by the value of the wiper control register. Data can be read or
written to the wiper control registers or the non-volatile
memory data registers via the SPI bus. Additional instructions
allow data to be transferred between the wiper control
registers and each respective potentiometer’s non-volatile
data registers. Also, the device can be instructed to operate in
an “increment/decrement” mode.
SERIAL BUS PROTOCOL
The CAT5041 supports the SPI bus data transmission
protocol. The synchronous Serial Peripheral Interface (SPI)
helps the CAT5411 to interface directly with many of
today’s popular microcontrollers. The CAT5041 contains an
8-bit instruction register. The instruction set and the
operation codes are detailed in the instruction set Table 12.
After the device is selected with CS going low the first
byte will be received. The part is accessed via the SI pin, with
data being clocked in on the rising edge of SCK. The first
byte contains one of the six op-codes that define the
operation to be performed.
Table 2. RELIABILITY CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Reference Test Method
Min
Typ
Max
Units
NEND (Note 1)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles/Byte
TDR (Note 1)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 1)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
Volts
ILTH (Note 1)
Latch-up
JEDEC Standard 17
100
mA
1. This parameter is tested initially and after a design or process change that affects the parameter.
Table 3. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
−55 to +125
C
Storage Temperature Range
−65 to +150
C
Voltage to any Pins with Respect to VSS (Notes 2, 3)
−2.0 to VCC +2.0
V
VCC with Respect to GND
−2.0 to +7.0
V
Package Power Dissipation Capability (TA = 25C)
1.0
W
Lead Soldering Temperature (10 s)
300
C
Wiper Current
12
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. The minimum DC input voltage is –0.5 V. During transitions, inputs may undershoot to –2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns.
3. Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1 V to VCC +1 V.
Table 4. RECOMMENDED OPERATING CONDITIONS
Parameters
Ratings
Units
VCC
+2.5 to 6.0
V
Industrial Temperature
−40 to +85
C


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