BSC0925ND datasheet(3/10 Pages) INFINEON

Part #	BSC0925ND

Description	OptiMOSTM Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC0925ND

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

870

1157

pF

Output capacitance

C oss

-

330

439

Reverse transfer capacitance

Crss

-

49

-

Turn-on delay time

t d(on)

-

4.7

-

ns

Rise time

t r

-

3.8

-

Turn-off delay time

t d(off)

-

17

-

Fall time

t f

-

3.0

-

Gate Charge Characteristics

6)

Gate to source charge

Q gs

-

2.4

3.2

nC

Gate charge at threshold

Q g(th)

-

1.4

-

Gate to drain charge

Q gd

-

2.2

2.9

Switching charge

Q sw

-

3.2

-

Gate charge total

Q g

-

6.7

8.9

Gate plateau voltage

V plateau

-

2.8

-

V

Gate charge total

Q g

V DD=15 V, I D=30 A,

V GS=0 to 10 V

-

13

17

nC

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

-

5.4

-

Output charge

Q oss

V DD=15 V, V GS=0 V

-

8.6

11

Reverse Diode

Diode continuous forward current

I S

-

30

A

Diode pulse current

I S,pulse

-

120

Diode forward voltage

V SD

V GS=0 V, I F=20 A,

T j=25 °C

-

0.87

1

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

5

-

nC

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=20 A, R G,ext=1.6 W

V DD=15 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 2.0

page 3

2013-07-30

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