BSC0924NDI datasheet(2/14 Pages) INFINEON

Part #	BSC0924NDI

Description	Dual N-Channel OptiMOS??MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC0924NDI

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Q1 R thJC

-

4.2

K/W

Q2

-

3.4

Q1 R thJA

Q2

Q1

Q2

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Q1

Q2

Q1

Q2

Gate threshold voltage

Q1

Q2

Zero gate voltage drain current

Q1 I DSS

-

1

µA

Q2

-

500

Q1

-

0.1

mA

Q2

-

3

-

Gate-source leakage current

Q1 I GSS

Q2

Q1 R DS(on)

-

5.4

7.0

m

W

Q2

-

4.2

5.2

Q1

-

3.8

5.0

Q2

-

2.8

3.7

Gate resistance

Q1 R G

1.3

2.6

5.2

W

Q2

0.5

0.9

1.8

Transconductance

Q1 g fs

32

65

-

S

Q2

36

71

-

|V DS|>2|I D|R DS(on)max,

I D=20 A

V DS=24 V, V GS=0 V,

T j=25 °C

V DS=24 V, V GS=0 V,

T j=150 °C

V

15

-

mV/K

100

2

1.2

-

Breakdown voltage temperature

coefficient

I D=10 mA, referenced

to 25 °C

V

V GS=4.5 V, I D=20 A

V GS=10 V, I D=20 A

dV

(BR)DSS

/dT j

-

30

Values

Drain-source on-state

resistance

Thermal resistance, junction -

ambient

1)

6 cm

2 cooling area2)

nA

-

V GS=20 V, V DS=0 V

-

Thermal resistance, junction -

case

V DS=V GS, I D=250 µA

minimal footprint,

steady state

3)

V (BR)DSS V GS=0 V, I D=10 mA

-

V GS(th)

50

125

-

Rev.2.0

page 2

2013-07-30

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