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BFP720 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BFP720
Description  Low Noise Silicon Germanium Bipolar RF Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720 Datasheet(HTML) 9 Page - Infineon Technologies AG

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BFP720
Maximum Ratings
Data Sheet
9
Revision 1.1, 2012-10-19
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1
Maximum Ratings at
T
A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Collector emitter voltage
VCEO
4.0
3.5
V
Open base
TA = 25 °C
TA = -55 °C
Collector emitter voltage
VCES
13
V
E-B short circuited
Collector base voltage
VCBO
13
V
Open emitter
Emitter base voltage
VEBO
––1.2
V
Open collector
Collector current
IC
––25
mA
Base current
IB
––2mA
Total power dissipation1)
1)TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point to the pcb
Ptot
100
mW
TS ≤ 108 °C
Junction temperature
TJ
150
°C
Storage temperature
TStg
-55
150
°C


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