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BFP640ESD Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BFP640ESD Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 28 page BFP640ESD Product Brief Data Sheet 7 Revision 1.1, 2012-09-17 1 Product Brief The BFP640ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plastic package with visible leads. |
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