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S26KS128S Datasheet(PDF) 1 Page - Cypress Semiconductor |
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S26KS128S Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 98 page  S26KL512S / S26KS512S S26KL256S / S26KS256S S26KL128S / S26KS128S 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte) 1.8V/3.0V HyperFlash™ Family Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-99198 Rev. *F Revised October 25, 2016 Features 3.0V I/O, 11 bus signals – Single ended clock 1.8V I/O, 12 bus signals – Differential clock (CK, CK#) Chip Select (CS#) 8-bit data bus (DQ[7:0]) Read-Write Data Strobe (RWDS) – HyperFlash™ memories use RWDS only as a Read Data Strobe Up to 333 MB/s sustained read throughput Double-Data Rate (DDR) – two data transfers per clock 166-MHz clock rate (333 MB/s) at 1.8V V CC 100-MHz clock rate (200 MB/s) at 3.0V V CC 96-ns initial random read access time – Initial random access read latency: 5 to 16 clock cycles Sequential burst transactions Configurable Burst Characteristics – Wrapped burst lengths: – 16 bytes (8 clocks) – 32 bytes (16 clocks) – 64 bytes (32 clocks) – Linear burst – Hybrid option — one wrapped burst followed by linear burst – Wrapped or linear burst type selected in each transaction – Configurable output drive strength Low Power Modes – Active Clock Stop During Read: 12 mA, no wake-up required – Standby: 25 µA (typical), no wake-up required – Deep Power-Down: 8 µA (typical) – 300 µs wake-up required INT# output to generate external interrupt – Busy to Ready Transition – ECC detection RSTO# output to generate system level power-on reset – User configurable RSTO# Low period 512-byte Program Buffer Sector Erase – Uniform 256-kB sectors – Optional Eight 4-kB Parameter Sectors (32 kB total) Advanced Sector Protection – Volatile and non-volatile protection methods for each sector Separate 1024-byte one-time program array Operating Temperature – Industrial (–40°C to +85°C) – Industrial Plus (–40°C to +105°C) – Extended (–40°C to +125°C) – Automotive, AEC-Q100 Grade 3 (–40°C to +85°C) – Automotive, AEC-Q100 Grade 2 (–40°C to +105°C) – Automotive, AEC-Q100 Grade 1 (–40°C to +125°C) ISO/TS16949 and AEC Q100 Certified Endurance – 100,000 program/erase cycles Retention – 20 year data retention Erase and Program Current – Max Peak 100 mA Packaging Options – 24-Ball FBGA Additional Features – ECC 1-bit correction, 2-bit detection – CRC (Check-value Calculation) |
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