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BSC019N04LS Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BSC019N04LS Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 13 page 4 OptiMOSTMPower-MOSFET,40V BSC019N04LS Rev.2.1,2016-05-24 Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS - - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 1.5 1.9 1.9 2.7 m Ω VGS=10V,ID=50A VGS=4.5V,ID=50A Gate resistance 1) RG - 0.8 1.6 Ω - Transconductance gfs 95 190 - S |VDS|>2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance 1) Ciss - 2900 4060 pF VGS=0V,VDS=20V,f=1MHz Output capacitance 1) Coss - 840 1180 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance 1) Crss - 68 136 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6 Ω Rise time tr - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6 Ω Turn-off delay time td(off) - 26 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6 Ω Fall time tf - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6 Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 7.6 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 6.2 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge 1) Qgd - 6.7 9.4 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 8.1 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total 1) Qg - 41 57 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total 1) Qg - 21 29 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 16 - nC VDS=0.1V,VGS=0to4.5V Output charge 1) Qoss - 37 52 nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition |
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