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BSC014N06NS Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSC014N06NS Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page BSC014N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 156 W T A=25 °C, R thJA=50 K/W 2) 2.5 Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC bottom - - 0.8 K/W top - - 20 Device on PCB R thJA 6 cm 2 cooling area2) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=120 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.5 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=10 V, I D=50 A - 1.2 1.45 m W V GS=6 V, I D=12.5 A - 1.6 2.2 Gate resistance R G - 2 3 W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 75 150 - S Value Values Drain-source on-state resistance Rev.2.1 page 2 2013-01-29 |
Similar Part No. - BSC014N06NS_13 |
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Similar Description - BSC014N06NS_13 |
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