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BSC010N04LSI Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # BSC010N04LSI
Description  OptiMOSTM Power-MOSFET, 40 V
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC010N04LSI Datasheet(HTML) 5 Page - Infineon Technologies AG

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5
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.2,2016-05-04
Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
15
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
9.9
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
2)
Qgd
-
14
20
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
19
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
2)
Qg
-
87
122
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
2)
Qg
-
45
63
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
76
-
nC
VDS=0.1V,VGS=0to10V
Output charge
2)
Qoss
-
83
116
nC
VDD=20V,VGS=0V
Table7Reversediode
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Diode continuous forward current
IS
-
-
100
A
TC=25°C
Diode pulse current
IS,pulse
-
-
400
A
TC=25°C
Diode forward voltage
VSD
-
0.57
0.7
V
VGS=0V,IF=20A,Tj=25°C
Reverse recovery charge
Qrr
-
20
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
1) See
″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test


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