BSB044N08NN3G datasheet(3/11 Pages) INFINEON

Part #	BSB044N08NN3G

Description	OptiMOS?? Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSB044N08NN3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

4300

5700

pF

Output capacitance

C oss

-

1100

1450

Reverse transfer capacitance

Crss

-

38

-

Turn-on delay time

t d(on)

-

14

-

ns

Rise time

t r

-

9

-

Turn-off delay time

t d(off)

-

26

-

Fall time

t f

-

7

-

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-

17

-

nC

Gate to drain charge

Q gd

-

11

-

Switching charge

Q sw

-

17

-

Gate charge total

Q g

-

55

73

Gate plateau voltage

V plateau

-

4.6

-

V

Output charge

Q oss

V DD=30 V, V GS=0 V

-

75

99

Reverse Diode

Diode continuous forward current

I S

-

30

A

Diode pulse current

I S,pulse

-

120

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

-

0.9

1.2

V

Reverse recovery time

t rr

-

55

-

ns

Reverse recovery charge

Q rr

-

110

-

nC

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=40 V,

f =1 MHz

V DD=40 V, V GS=10 V,

I D=30 A, R G=1.6 W

V DD=40 V, I D=30 A,

V GS=0 to 10 V

V R=40 V, I F=I S,

di F/dt =400 A/µs

Rev. 2.0

page 3

2011-07-18

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