BSB013NE2LXI datasheet(1/11 Pages) INFINEON

Part #	BSB013NE2LXI

Description	OptiMOSTM Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSB013NE2LXI

OptiMOSTM Power-MOSFET

Features

• Optimized SyncFET for high performance Buck converter

• Integrated monolithic Schottky like diode

• Low profile (<0.7 mm)

• 100% avalanche tested

• 100% R

G Tested

• Double-sided cooling

• Compatible with DirectFET® package MX footprint and outline

1)

• Qualified according to JEDEC

2) for target applications

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

163

A

V GS=10 V, T C=100 °C

103

V GS=10 V, T A=25 °C,

R thJA=45 K/W

3)

36

Pulsed drain current

4)

I D,pulse

T C=25 °C

400

Avalanche current, single pulse

5)

I AS

T C=25 °C

40

Avalanche energy, single pulse

E AS

I D=40 A, R GS=25 W

130

mJ

Gate source voltage

V GS

±20

V

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5) See figure 13 for more detailed information

Value

1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a

registered trademark of International Rectifier Corporation.

2) J-STD20 and JESD22

4) See figure 3 for more detailed information

Type

Package

Outline

Marking

BSB013NE2LXI

MG-WDSON-2

MX

02E2

CanPAKTM M

MG-WDSON-2

V

DS

25

V

R

DS(on),max

1.3

m

W

I

D

163

A

Q

oss

39

nC

Q

g(0V..10V)

62

nC

Product Summary

Rev. 2.4

page 1

2013-02-12

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