KM416S4030CT-G datasheet(5/11 Pages) SAMSUNG

Part #	KM416S4030CT-G

Description	1M x 16Bit x 4 Banks Synchronous DRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 11 page

KM416S4030C

REV. 2 June '98

CMOS SDRAM

Preliminary

1. Measured with outputs open.

2. Refresh period is 64ms.

3. KM416S4030CT-G**

4. KM416S4030CT-F**

Notes :

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, T

A

= 0 to 70

°C)

Parameter

Symbol

Test Condition

CAS

Latency

Version

Unit

Note

-7

-8

-H

-L

-10

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IOL = 0 mA

75

70

65

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 15ns

1

mA

ICC2PS CKE & CLK

≤ VIL(max), tCC = ∞

1

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

12

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

6

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 15ns

2

mA

ICC3PS CKE & CLK

≤ VIL(max), tCC = ∞

2

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

20

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

10

mA

Operating current

(Burst mode)

ICC4

IOL = 0 mA

Page burst

2Banks activated

tCCD = 2CLKs

3

130

115

90

mA

1

2

90

85

Refresh current

ICC5

tRC

≥ tRC(min)

125

110

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

1

mA

3

450

uA

4

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