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IKW25N120H3 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IKW25N120H3
Description  1200V high speed switching series third generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW25N120H3 Datasheet(HTML) 6 Page - Infineon Technologies AG

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IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
-
27
-
ns
Rise time
tr
-
41
-
ns
Turn-off delay time
td(off)
-
277
-
ns
Fall time
tf
-
17
-
ns
Turn-on energy
Eon
-
1.80
-
mJ
Turn-off energy
Eoff
-
0.85
-
mJ
Total switching energy
Ets
-
2.65
-
mJ
Tvj=25°C,
VCC=600V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=23.0
Ω,RG(off)=23.0Ω,
L
σ=80nH,Cσ=67pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
290
-
ns
Diode reverse recovery charge
Qrr
-
1.20
-
µC
Diode peak reverse recovery current
Irrm
-
10.4
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-150
-
A/µs
Tvj=25°C,
VR=600V,
IF=25.0A,
diF/dt=500A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
-
26
-
ns
Rise time
tr
-
35
-
ns
Turn-off delay time
td(off)
-
347
-
ns
Fall time
tf
-
50
-
ns
Turn-on energy
Eon
-
2.60
-
mJ
Turn-off energy
Eoff
-
1.70
-
mJ
Total switching energy
Ets
-
4.30
-
mJ
Tvj=175°C,
VCC=600V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=23.0
Ω,RG(off)=23.0Ω,
L
σ=80nH,Cσ=67pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
-
505
-
ns
Diode reverse recovery charge
Qrr
-
2.75
-
µC
Diode peak reverse recovery current
Irrm
-
12.8
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-85
-
A/µs
Tvj=175°C,
VR=600V,
IF=25.0A,
diF/dt=500A/µs


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