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IKW25N120H3 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IKW25N120H3 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 16 page 6 IKW25N120H3 Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 27 - ns Rise time tr - 41 - ns Turn-off delay time td(off) - 277 - ns Fall time tf - 17 - ns Turn-on energy Eon - 1.80 - mJ Turn-off energy Eoff - 0.85 - mJ Total switching energy Ets - 2.65 - mJ Tvj=25°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, RG(on)=23.0 Ω,RG(off)=23.0Ω, L σ=80nH,Cσ=67pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 290 - ns Diode reverse recovery charge Qrr - 1.20 - µC Diode peak reverse recovery current Irrm - 10.4 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -150 - A/µs Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 26 - ns Rise time tr - 35 - ns Turn-off delay time td(off) - 347 - ns Fall time tf - 50 - ns Turn-on energy Eon - 2.60 - mJ Turn-off energy Eoff - 1.70 - mJ Total switching energy Ets - 4.30 - mJ Tvj=175°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, RG(on)=23.0 Ω,RG(off)=23.0Ω, L σ=80nH,Cσ=67pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 505 - ns Diode reverse recovery charge Qrr - 2.75 - µC Diode peak reverse recovery current Irrm - 12.8 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -85 - A/µs Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs |
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