IKP04N60T_16 datasheet(3/13 Pages) INFINEON | IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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IKP04N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

Part #	IKP04N60T

Description	IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 13 page

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IKP04N60T

TRENCHSTOP

TM Series

q

IFAG IPC TD VLS

3

Rev. 2.8 17.02.2016

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j =2 5 °C ,

VC C = 40 0 V, IC = 4 A,

VG E = 0/ 15 V ,

R G = 4 7Ω ,

L σ

1 ) =150nH,

C σ

1 ) =47pF

Energy losses include

“tail” and diode

reverse recovery.

-

14

-

ns

Rise time

t r

-

7

-

Turn-off delay time

t d( of f)

-

164

-

Fall time

t f

-

43

-

Turn-on energy

Eo n

-

61

-

µJ

Turn-off energy

Eo ff

-

84

-

Total switching energy

Et s

-

145

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =2 5 °C ,

VR = 4 00 V , IF = 4 A,

d iF/ d t =6 1 0 A/ µs

-

28

-

ns

Diode reverse recovery charge

Q rr

-

79

-

nC

Diode peak reverse recovery current

I rr m

-

5.3

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

346

-

A/

µs

Switching Characteristic, Inductive Load, at Tj=175°C

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j =1 7 5° C,

VC C = 40 0 V, IC = 4 A,

VG E = 0/ 15 V ,

R G = 4 7Ω

L σ

1 ) =150nH,

C σ

1 ) =47pF

Energy losses include

“tail” and diode

reverse recovery.

-

14

-

ns

Rise time

t r

-

10

-

Turn-off delay time

t d( of f)

-

185

-

Fall time

t f

-

83

-

Turn-on energy

Eo n

-

99

-

µJ

Turn-off energy

Eo ff

-

97

-

Total switching energy

Et s

-

196

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =1 7 5° C

VR = 4 00 V , IF = 4 A,

d iF/ d t =6 1 0 A/ µs

-

95

-

ns

Diode reverse recovery charge

Q rr

-

291

-

nC

Diode peak reverse recovery current

I rr m

-

6.6

-

A

Diode peak rate of fall of reverse

recovery current during t b

d irr /d t

-

253

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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