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IKA08N65F5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IKA08N65F5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 17 page 6 IKA08N65F5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-05 Turn-on delay time td(on) - 9 - ns Rise time tr - 3 - ns Turn-off delay time td(off) - 129 - ns Fall time tf - 35 - ns Turn-on energy Eon - 0.04 - mJ Turn-off energy Eoff - 0.02 - mJ Total switching energy Ets - 0.06 - mJ Tvj=25°C, VCC=400V,IC=2.0A, VGE=0.0/15.0V, RG(on)=48.0 Ω,RG(off)=48.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 41 - ns Diode reverse recovery charge Qrr - 0.14 - µC Diode peak reverse recovery current Irrm - 6.6 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -160 - A/µs Tvj=25°C, VR=400V, IF=4.0A, diF/dt=800A/µs Diode reverse recovery time trr - 27 - ns Diode reverse recovery charge Qrr - 0.10 - µC Diode peak reverse recovery current Irrm - 6.2 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -300 - A/µs Tvj=25°C, VR=400V, IF=2.0A, diF/dt=800A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 9 - ns Rise time tr - 6 - ns Turn-off delay time td(off) - 145 - ns Fall time tf - 18 - ns Turn-on energy Eon - 0.10 - mJ Turn-off energy Eoff - 0.03 - mJ Total switching energy Ets - 0.13 - mJ Tvj=150°C, VCC=400V,IC=4.0A, VGE=0.0/15.0V, RG(on)=48.0 Ω,RG(off)=48.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 9 - ns Rise time tr - 4 - ns Turn-off delay time td(off) - 165 - ns Fall time tf - 25 - ns Turn-on energy Eon - 0.06 - mJ Turn-off energy Eoff - 0.02 - mJ Total switching energy Ets - 0.08 - mJ Tvj=150°C, VCC=400V,IC=2.0A, VGE=0.0/15.0V, RG(on)=48.0 Ω,RG(off)=48.0Ω, L σ=30nH,Cσ=30pF L σ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. |
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