Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

TMS28F010B-10 Datasheet(PDF) 8 Page - Texas Instruments

Part # TMS28F010B-10
Description  131072 BY 8-BIT FLASH MEMORY
Download  23 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F010B-10 Datasheet(HTML) 8 Page - Texas Instruments

Back Button TMS28F010B-10 Datasheet HTML 4Page - Texas Instruments TMS28F010B-10 Datasheet HTML 5Page - Texas Instruments TMS28F010B-10 Datasheet HTML 6Page - Texas Instruments TMS28F010B-10 Datasheet HTML 7Page - Texas Instruments TMS28F010B-10 Datasheet HTML 8Page - Texas Instruments TMS28F010B-10 Datasheet HTML 9Page - Texas Instruments TMS28F010B-10 Datasheet HTML 10Page - Texas Instruments TMS28F010B-10 Datasheet HTML 11Page - Texas Instruments TMS28F010B-10 Datasheet HTML 12Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 23 page
background image
TMS28F010B
131072 BY 8-BIT
FLASH MEMORY
SMJS824B – MAY 1995 – REVISED AUGUST 1997
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
command definitions (continued)
set-up-erase / erase commands
The erase-algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the erase mode,
write the set-up-erase command, 20h, into the command register. After the TMS28F010B is in the erase mode,
writing a second erase command, 20h, into the command register invokes the erase operation. The erase
operation begins on the rising edge of W and ends on the rising edge of the next W. The erase operation requires
at least 9.5 ms to complete before the erase-verify command, A0h, can be loaded.
Maximum erase timing is controlled by the internal stop timer. When the stop timer terminates the erase
operation, the device enters an inactive state and remains inactive until a command is received.
program-verify command
The TMS28F010B can be programmed sequentially or randomly because it is programmed one byte at a time.
Each byte must be verified after it is programmed. The program-verify operation prepares the device to verify
the most recently programmed byte. To invoke the program-verify operation, C0h must be written into the
command register. The program-verify operation ends on the rising edge of W.
While verifying a byte, the TMS28F010B applies an internal margin voltage to the designated byte. If the true
data and programmed data match, programming continues to the next designated byte location; otherwise, the
byte must be reprogrammed. Figure 1 shows how commands and bus operations are combined for byte
programming.
erase-verify command
All bytes must be verified following an erase operation. After the erase operation is complete, an erased byte
can be verified by writing the erase-verify command, A0h, into the command register. This command causes
the device to exit the erase mode on the rising edge of W. The address of the byte to be verified is latched on
the falling edge of W. The erase-verify operation remains enabled until a command is written to the command
register.
To determine whether or not all the bytes have been erased, the TMS28F010B applies a margin voltage to each
byte. If FFh is read from the byte, all bits in the designated byte have been erased. The erase-verify operation
continues until all of the bytes have been verified. If FFh is not read from a byte, an additional erase operation
needs to be executed. Figure 2 shows the combination of commands and bus operations for electrically erasing
the TMS28F010B.
set-up-program / program commands
The programming algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the
programming mode, write the set-up-program command, 40h, into the command register. The programming
operation is invoked by the next write-enable pulse. Addresses are latched internally on the falling edge of W,
and data is latched internally on the rising edge of W. The programming operation begins on the rising edge
of W and ends on the rising edge of the next W pulse. The program operation requires 10
µs for completion
before the program-verify command, C0h, can be loaded.
Maximum program timing is controlled by the internal stop timer. When the stop timer terminates the program
operation, the device enters an inactive state and remains inactive until a command is received.
reset command
To reset the TMS28F010B after set-up-erase command or set-up-program command operations without
changing the contents in memory, write FFh into the command register two consecutive times. After executing
the reset command, the device defaults to the read mode.


Similar Part No. - TMS28F010B-10

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
TMS28F010A TI-TMS28F010A Datasheet
328Kb / 22P
[Old version datasheet]   1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010A-10 TI-TMS28F010A-10 Datasheet
328Kb / 22P
[Old version datasheet]   1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010A-10C3DDE4 TI-TMS28F010A-10C3DDE4 Datasheet
328Kb / 22P
[Old version datasheet]   1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010A-10C3DDL4 TI-TMS28F010A-10C3DDL4 Datasheet
328Kb / 22P
[Old version datasheet]   1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010A-10C3DDQ4 TI-TMS28F010A-10C3DDQ4 Datasheet
328Kb / 22P
[Old version datasheet]   1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
More results

Similar Description - TMS28F010B-10

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
SMJ28F010B TI-SMJ28F010B Datasheet
335Kb / 23P
[Old version datasheet]   131072 BY 8-BIT FLASH MEMORY
TMS29F010 TI-TMS29F010 Datasheet
465Kb / 36P
[Old version datasheet]   131072 BY 8-BIT FLASH MEMORY
logo
Mitsubishi Electric Sem...
M5M28F101AFP MITSUBISHI-M5M28F101AFP Datasheet
96Kb / 10P
   1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
logo
List of Unclassifed Man...
HN28F101 ETC-HN28F101 Datasheet
106Kb / 18P
   131072-word x 8-bit CMOS Flash Memory
logo
Texas Instruments
TMS28F200BZT TI-TMS28F200BZT Datasheet
405Kb / 29P
[Old version datasheet]   262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS29F040 TI-TMS29F040 Datasheet
482Kb / 37P
[Old version datasheet]   524288 BY 8-BIT FLASH MEMORY
TMS28F020 TI-TMS28F020 Datasheet
312Kb / 21P
[Old version datasheet]   262144 BY 8-BIT FLASH MEMORY
TMS28F512A TI-TMS28F512A Datasheet
311Kb / 21P
[Old version datasheet]   65536 BY 8-BIT FLASH MEMORY
TMS28F002AXY TI-TMS28F002AXY Datasheet
1Mb / 79P
[Old version datasheet]   262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
logo
Sanyo Semicon Device
LE28C1001M SANYO-LE28C1001M Datasheet
281Kb / 14P
   1MEG (131072 words x 8 bits) Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com