Document Number: 73455

S09-2277-Rev. C, 02-Nov-09

www.vishay.com

5

Vishay Siliconix

Si3529DV

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

0.01

10

0.0

0.2

0.4

0.6

0.8

1

- 50

- 25

0

25

50

75

100

125

150

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.07

0.14

0.21

0.28

0.35

0

2468

10

0.01

0

1

6

8

2

4

10

30

0.1

Time (s)

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

1 ms

Single Pulse

10 ms

100 ms

DC

1 s

10 s

100 s

100 µs

10 µs

>