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SI4567DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4567DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Vishay Siliconix Si4567DY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 40 V VGS = 0 V, ID = - 250 µA P-Ch - 40 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 40 ID = - 250 µA P-Ch - 40 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 4.6 IID = - 250 µA P-Ch 3.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.8 2.2 VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V N-Ch 100 nA P-Ch - 100 Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V N-Ch 1 µA VDS = - 40 V, VGS = 0 V P-Ch - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V N-Ch 20 A VDS = - 5 V, VGS = - 10 V P-Ch - 20 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 4.1 A N-Ch 0.048 0.060 Ω VGS = - 10 V, ID = - 3.6 A P-Ch 0.068 0.085 VGS = 4.5 V, ID = 3.8 A N-Ch 0.056 0.070 VGS = - 4.5 V, ID = - 2.9 A P-Ch 0.097 0.122 Forward Transconductanceb gfs VDS = 15 V, ID = 4.1 A N-Ch 15 S VDS = - 15 V, ID = - 3.6 A P-Ch 7 Dynamica Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 355 pF P-Ch 480 Output Capacitance Coss N-Ch 50 P-Ch 80 Reverse Transfer Capacitance Crss N-Ch 29 P-Ch 56 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 8 12 nC VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 12 18 N-Channel VDS = 20 V, VGS = 4.5 V ID = 5 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A N-Ch 3.7 6 P-Ch 6 9 Gate-Source Charge Qgs N-Ch 1.1 P-Ch 1.5 Gate-Drain Charge Qgd N-Ch 1.4 P-Ch 2.7 Gate Resistance Rg f = 1 MHz N-Ch 1.6 3.4 5.2 Ω P-Ch 2.8 5.7 8.6 |
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