SI4567DY datasheet(2/12 Pages) VISHAY

Part #	SI4567DY

Description	N- and P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73426

S09-0393-Rev. C, 09-Mar-09

Vishay Siliconix

Si4567DY

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

40

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 40

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

40

ID = - 250 µA

P-Ch

- 40

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 4.6

IID = - 250 µA

P-Ch

3.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.8

2.2

VDS = VGS, ID = - 250 µA

P-Ch

- 0.8

- 2.2

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

N-Ch

100

nA

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

N-Ch

1

µA

VDS = - 40 V, VGS = 0 V

P-Ch

- 1

VDS = 40 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 40 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

20

A

VDS = - 5 V, VGS = - 10 V

P-Ch

- 20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 4.1 A

N-Ch

0.048

0.060

Ω

VGS = - 10 V, ID = - 3.6 A

P-Ch

0.068

0.085

VGS = 4.5 V, ID = 3.8 A

N-Ch

0.056

0.070

VGS = - 4.5 V, ID = - 2.9 A

P-Ch

0.097

0.122

Forward Transconductanceb

gfs

VDS = 15 V, ID = 4.1 A

N-Ch

15

S

VDS = - 15 V, ID = - 3.6 A

P-Ch

7

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 20 V, VGS = 0 V, f = 1 MHz

N-Ch

355

pF

P-Ch

480

Output Capacitance

Coss

N-Ch

50

P-Ch

80

Reverse Transfer Capacitance

Crss

N-Ch

29

P-Ch

56

Total Gate Charge

Qg

VDS = 20 V, VGS = 10 V, ID = 5 A

N-Ch

8

12

nC

VDS = - 20 V, VGS = - 10 V, ID = - 5 A

P-Ch

12

18

N-Channel

VDS = 20 V, VGS = 4.5 V ID = 5 A

P-Channel

VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A

N-Ch

3.7

6

P-Ch

6

9

Gate-Source Charge

Qgs

N-Ch

1.1

P-Ch

1.5

Gate-Drain Charge

Qgd

N-Ch

1.4

P-Ch

2.7

Gate Resistance

Rg

f = 1 MHz

N-Ch

1.6

3.4

5.2

Ω

P-Ch

2.8

5.7

8.6

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