SI4569DY datasheet(9/12 Pages) VISHAY

Part #	SI4569DY

Description	N- and P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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9 / 12 page

Document Number: 73586

S09-0393-Rev. B, 09-Mar-09

www.vishay.com

9

Vishay Siliconix

Si4569DY

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

100

10

1

0.3

0.6

0.9

1.2

1.5

TJ = 150 °C

TJ = 25 °C

0.0

- 0.3

- 0.1

0.1

0.3

0.5

0.7

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID = 5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.03

0.06

0.09

0.12

0.15

012

345

67

89

10

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

ID = 6 A

0

10

20

30

40

50

Time (s)

110

0.1

0.01

0.001

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

Limited by RDS(on)*

1 ms

10 ms

100 ms

DC

1 s

10 s

0.0

TA = 25 °C

Single Pulse

>

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SI4569DY Datasheet(PDF) 9 Page - Vishay Siliconix

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